pnp BC177 ? bc178 ? bc179 18/10/2012 comset semiconductors 1 | 3 l l o o w w n n o o i i s s e e g g e e n n e e r r a a l l p p u u r r p p o o s s e e a a u u d d i i o o a a m m p p l l i i f f i i e e r r s s the BC177,bc178 and bc179 are silicon planar epitaxial pnp transistors mounted in to-18 metal package. they are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. compliance to rohs. absolute maximum ratings symbol BC177 bc178 bc179 unit v ceo collector-emitter voltage (i b =0) -50 -30 -25 v v cbo collector-base voltage (i e =0) -45 -25 -20 v v ebo emitter-base voltage (i c =0) -5 v i c collector current -100 ma i cm collector peak current -200 ma p d total power dissipation @ t amb = 25 300 mw t j junction temperature 175 c t st g storage temperature range -65 to +150 c electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb =-20 v i e = 0 BC177 - -1 -100 na bc178 bc179 v cb = -20 v i e = 0 v t j = 150c BC177 - - -10 a bc178 bc179 v ceo collector-emitter breakdown voltage i c = -2 ma i b = 0 BC177 -45 - - v bc178 -25 - - bc179 -20 - - v cbo collector-base breakdown voltage i c = -10 a v be = 0 BC177 -50 - - v bc178 -30 - - bc179 -25 - - v ebo emitter-base breakdown voltage i e = -10 a i c = 0 BC177 -5 v bc178 bc179
pnp BC177 ? bc178 ? bc179 18/10/2012 comset semiconductors 2 | 3 electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ max unit v ce(sat) collector-emitter saturation voltage i c =-10 ma i b =-0.5 ma BC177 - -0.075 -0.25 bc178 bc179 i c =-100 ma i b =-5 ma BC177 - -0.2 - bc178 bc179 v be(sat) base-emitter saturation voltage i c =-10 ma i b =-0.5 ma BC177 - -0.72 -0.8 v bc178 bc179 i c =-100 ma i b =-5 ma BC177 - -0.86 - bc178 bc179 v be base-emitter voltage i c =-2 ma v ce =-5 v BC177 -0.6 -0.65 -0.75 v bc178 bc179 h fe dc current gain (*) i c = -2 ma v ce = 5 v BC177a 125 - 260 - bc178a bc179a BC177b 240 - 500 bc178b bc179b f t transition frequency i c =-10 ma v ce =-5 v f = 100 mhz BC177 - 200 - mhz bc178 bc179 f noise figure i c = -200 a v ce =-5 v f = 1khz r g =2k ? b = 200hz BC177 - - 10 db bc178 - - 10 bc179 - - 4 c c collector capacitance i e = 0 v cb =-10 v f = 1mhz BC177 - 5 - pf bc178 bc179 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to mounting base 500 c/w r thj-c thermal resistance, junction to ambient in free air 200 c/w
pnp BC177 ? bc178 ? bc179 03/09/2012 comset semiconductors 2/3 echanical data case to-18 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 12.7 - b - 0.49 c 0.9 - d - 5.3 e - 4.9 f - 5.8 g 2.54 - h - 1.2 i - 1.16 l 45 - pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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